In key technical areas such as high-voltage and ultra-high-voltage epitaxial thickness and radiation resistance, we have reached the technical standards of global industry leaders through independent research and development. According to Frost & Sullivan, we led the development of the first domestic industry standard for SiC epitaxial thickness and became the first company in China to achieve mass production and delivery of high-voltage and ultra-high-voltage thick-film epitaxial wafers. In the high-voltage domain, our product advantages are particularly noteworthy. We have mastered key technologies such as ‘‘zero BPD dislocation’’ in epitaxial growth, low defect density, and high concentration uniformity. These advancements have solidified our industry position and earned us the privilege of being a primary supplier to high-voltage customers in sectors such as rail transit. In the ultra-high-voltage field, we have also made remarkable progress, and successfully developed 4H-SiC thick-film rapid epitaxial growth technology. Among these innovations, the minority carrier lifetime is a critical metric for assessing the quality of thick-film epitaxy. By employing advanced techniques, we have successfully extended the minority carrier lifetime of epitaxy to 7 to 9 microseconds, which is a leading achievement in the industry, according to Frost & Sullivan.
According to Frost & Sullivan, our product performance is recognized as being at the international leading level.
1.Thicker epitaxial layers:
In contrast, epitaxial materials used in high-voltage and ultra-high-voltage devices operate at voltage levels as high as 3,300V to 20kV. These devices require thicker epitaxial layers, ranging from 30 to 200 microns, to address the challenges posed by high-voltage and ultra-high-voltage application scenarios. Our products offer a broad thickness range of 0.2 to 300 microns, surpassing the thickness range of
mainstream industry products, which is typically 0.1 to 250 microns, according to Frost & Sullivan. It highlights our technology edge in epitaxial material used in ultra-high-voltage devices.
2.Doping concentration uniformity:
Doping concentration uniformity refers to the deviation of the actual doping concentration of the epitaxial wafer from the average doping concentration. Lower uniformity deviation indicates higher product quality. Our products achieve a doping concentration uniformity deviation of ≤3%, positioning us as a leader compared to the mainstream range of ≤3% to ≤10%, according to Frost & Sullivan.
3.Chip yield rate:
A higher chip yield rate indicates a greater success rate in producing transistors that meet specifications and deliver stable performance during actual production. Our products achieve a chip yield rate of ≥99%, exceeding the mainstream industry range between 90% and 98%, according to Frost & Sullivan. It showcases our leading edge and exceptional expertise in semiconductor manufacturing technology.
