On January 16^th 2026, TYSiC (02658.HK) and iSABers Group Co., Ltd. entered into a strategic cooperation agreement. Leveraging TYSiC’s advantages in the field of silicon carbide (SiC) materials and iSABers’s capabilities in bonding equipment customization and optimization, the two parties will jointly carry out process development and technological iteration of bonding materials, including bonded SiC, silicon-on-insulator (SOI), piezoelectric-on-insulator (POI), and ultra-large-size (12-inch and above) SiC composite heat dissipation substrates.

Both parties agree that TYSiC shall conduct process development and mass production introduction of bonding materials including bonded SiC, SOI, POI, 12-inch SiC composite heat dissipation substrates and interposers, while iSABers shall provide TYSiC with equipment and relevant technical support for ion implantation, wafer-level bonding, precision polishing, crystal repair and debonding. This cooperation will give full play to TYSiC’s advantages in silicon carbide materials and iSABers’s capabilities in bonding equipment customization and optimization. It is expected to enhance TYSiC’s technical prowess in the bonding materials segment and further consolidate its market position.

This cooperation is not only a technical alliance, but also a strategic exploration by TYSiC in the context of industrial trends. In recent years, the global semiconductor industry has gradually shifted its competitive focus from traditional silicon materials to third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN). With the rapid development of industries including new energy vehicles, photovoltaic power generation and 5G communications, the demand for high-performance power devices, whose core materials are silicon carbide and related composite substrates, is constantly growing. The cooperation between TYSiC and iSABers is exactly a reflection of this trend.

Looking ahead, TYSiC will continue to focus on technological innovation and industrial upgrading. While maintaining its advantages in silicon carbide epitaxial wafers, TYSiC will actively explore broader material applications and solutions. With the further advancement of the cooperation with iSABers, TYSiC is expected to build a new technological highland in the field of advanced bonding materials, drive the overall upgrading of the industrial chain, and set a powerful example for the development of China’s semiconductor materials industry.